BUL1203E

BUL1203E vs BUL1203E(E) vs BUL1203E///

 
PartNumberBUL1203EBUL1203E(E)BUL1203E///
DescriptionBipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET
ManufacturerSTMicroelectronics--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max550 V--
Collector Base Voltage VCBO1.2 kV--
Emitter Base Voltage VEBO9 V--
Maximum DC Collector Current5 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBUL1203E--
Height9.15 mm (Max)--
Length10.4 mm (Max)--
PackagingTube--
Width4.6 mm (Max)--
BrandSTMicroelectronics--
Pd Power Dissipation100000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.081130 oz--
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
BUL1203E Bipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET
BUL1203E Bipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET
BUL1203EFP Bipolar Transistors - BJT PWR BIP/S.SIGNAL
BUL1203E(E) Nuevo y original
BUL1203E/// Nuevo y original
Top