PartNumber | BUL1102EFP | BUL1102E |
Description | Bipolar Transistors - BJT High voltage fast switching NPN power transistor | Bipolar Transistors - BJT High voltage fast switching NPN power transistor |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220FP-3 | TO-220-3 |
Transistor Polarity | NPN | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 450 V | 450 V |
Emitter Base Voltage VEBO | 12 V | 12 V |
Maximum DC Collector Current | 4 A | 4 A |
Minimum Operating Temperature | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | BUL1102E | BUL1102E |
Height | 16.4 mm | 15.75 mm |
Length | 10.4 mm | 10.4 mm |
Packaging | Tube | Tube |
Width | 4.6 mm | 4.6 mm |
Brand | STMicroelectronics | STMicroelectronics |
Continuous Collector Current | 4 A | 4 A |
DC Collector/Base Gain hfe Min | 35 at 250 mA, 5 V, 12 at 2 A, 5 V | 35 at 250 mA, 5 V, 12 at 2 A, 5 V |
Pd Power Dissipation | 30 W | 70 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.090478 oz | 0.211644 oz |