PartNumber | BUK965R8-100E,118 | BUK965R8-100E | BUK965R8-100E118 |
Description | MOSFET N-channel TrenchMOS intermed level FET | MOSFET, N CHANNEL, 100V, 120A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.00445ohm, Rds(on) Test Voltage Vgs:10 | - Bulk (Alt: BUK965R8-100E118) |
Manufacturer | Nexperia | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 120 A | - | - |
Rds On Drain Source Resistance | 5.8 mOhms | - | - |
Vgs Gate Source Voltage | 2.1 V | - | - |
Pd Power Dissipation | 357 W | - | - |
Configuration | Single | - | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Nexperia | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.139332 oz | - | - |