BUK965R8

BUK965R8-100E,118 vs BUK965R8-100E vs BUK965R8-100E118

 
PartNumberBUK965R8-100E,118BUK965R8-100EBUK965R8-100E118
DescriptionMOSFET N-channel TrenchMOS intermed level FETMOSFET, N CHANNEL, 100V, 120A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.00445ohm, Rds(on) Test Voltage Vgs:10- Bulk (Alt: BUK965R8-100E118)
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance5.8 mOhms--
Vgs Gate Source Voltage2.1 V--
Pd Power Dissipation357 W--
ConfigurationSingle--
QualificationAEC-Q101--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
BUK965R8-100E,118 MOSFET N-channel TrenchMOS intermed level FET
BUK965R8-100E,118 MOSFET N-CH 100V 120A D2PAK
BUK965R8-100E MOSFET, N CHANNEL, 100V, 120A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.00445ohm, Rds(on) Test Voltage Vgs:10
BUK965R8-100E118 - Bulk (Alt: BUK965R8-100E118)
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