BUK964R2

BUK964R2-55B,118 vs BUK964R2-80E,118 vs BUK964R2-60E,118

 
PartNumberBUK964R2-55B,118BUK964R2-80E,118BUK964R2-60E,118
DescriptionMOSFET HIGH PERF TRENCHMOSMOSFET N-Chan 80V 120AMOSFET BUK964R2-60E/D2PAK/REEL 13" Q1
ManufacturerNexperiaNexperiaNexperia
Product CategoryMOSFETMOSFETMOSFET
RoHSYEY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V80 V-
Id Continuous Drain Current191 A120 A-
Rds On Drain Source Resistance3.7 mOhms4.2 mOhms-
Vgs Gate Source Voltage15 V10 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W349 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
PackagingReelReelReel
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel1 N-Channel-
Width9.4 mm--
BrandNexperiaNexperiaNexperia
Fall Time178 ns115 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time232 ns109 ns-
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time273 ns203 ns-
Typical Turn On Delay Time63 ns70 ns-
Part # Aliases/T3 BUK964R2-55B--
Vgs th Gate Source Threshold Voltage-1.7 V-
Qg Gate Charge-123 nC-
Unit Weight-0.139332 oz0.077603 oz
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
BUK964R2-55B,118 MOSFET HIGH PERF TRENCHMOS
BUK964R2-80E,118 MOSFET N-Chan 80V 120A
BUK964R2-60E,118 MOSFET BUK964R2-60E/D2PAK/REEL 13" Q1
BUK964R2-60E,118 MOSFET N-CH 60V 100A D2PAK
BUK964R2-80E,118 IGBT Transistors MOSFET N-Chan 80V 120A
BUK964R2-55B,118 MOSFET HIGH PERF TRENCHMOS
BUK964R2-55B Nuevo y original
BUK964R2-60E118 Nuevo y original
BUK964R2-80E118 Now Nexperia BUK964R2-80E - Power Field-Effect Transistor, 120A I(D), 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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