BUK9635

BUK9635-55A,118 vs BUK9635-55,118 vs BUK9635-100A,118

 
PartNumberBUK9635-55A,118BUK9635-55,118BUK9635-100A,118
DescriptionMOSFET TAPE13 PWR-MOSMOSFET N-CH 55V 34A D2PAKIGBT Transistors MOSFET TAPE13 PWR-MOS
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current34 A--
Rds On Drain Source Resistance32 mOhms--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation85 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time73 ns--
Product TypeMOSFET--
Rise Time36 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time96 ns--
Typical Turn On Delay Time6 ns--
Part # Aliases/T3 BUK9635-55A--
Unit Weight0.050442 oz--
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
BUK9635-55A,118 MOSFET TAPE13 PWR-MOS
BUK9635-55A,118 IGBT Transistors MOSFET TAPE13 PWR-MOS
NXP Semiconductors
NXP Semiconductors
BUK9635-55,118 MOSFET N-CH 55V 34A D2PAK
BUK9635-100A,118 IGBT Transistors MOSFET TAPE13 PWR-MOS
BUK9635-100A-118 Now Nexperia BUK9635-100A - Power Field-Effect Transistor, 41A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK963555 TRENCHMOS TRANSISTOR LOGIC LEVEL FET PLASTIC, SOT-404, 3 PIN
BUK963555AC1 N-CHANNEL TRENCHMOS LOGIC LEVEL FET PLASTIC, D2PAK-3
BUK9635-55A Nuevo y original
BUK9635-100A Nuevo y original
BUK9635-55 Power Field-Effect Transistor, 34A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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