BUK9608

BUK9608-55B,118 vs BUK9608-55A,118

 
PartNumberBUK9608-55B,118BUK9608-55A,118
DescriptionMOSFET HIGH PERF TRENCHMOSMOSFET TAPE13 PWR-MOS
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V
Id Continuous Drain Current110 A125 A
Rds On Drain Source Resistance7 mOhms7.5 mOhms
Vgs Gate Source Voltage15 V10 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation203 W253 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101AEC-Q101
PackagingReelReel
Height4.5 mm4.5 mm
Length10.3 mm10.3 mm
Transistor Type1 N-Channel1 N-Channel
Width9.4 mm9.4 mm
BrandNexperiaNexperia
Fall Time86 ns167 ns
Product TypeMOSFETMOSFET
Rise Time123 ns175 ns
Factory Pack Quantity800800
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time131 ns280 ns
Typical Turn On Delay Time29 ns40 ns
Part # Aliases/T3 BUK9608-55B/T3 BUK9608-55A
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
BUK9608-55B,118 MOSFET HIGH PERF TRENCHMOS
BUK9608-55A,118 MOSFET TAPE13 PWR-MOS
BUK9608-55A,118 Darlington Transistors MOSFET TAPE13 PWR-MOS
BUK9608-55B,118 RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
NXP Semiconductors
NXP Semiconductors
BUK9608-55,118 MOSFET N-CH 55V 75A D2PAK
BUK9608-55A Nuevo y original
BUK9608-55A118 Now Nexperia BUK9608-55A - Power Field-Effect Transistor, 125A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK9608-55B Nuevo y original
BUK9608-55B118 - Bulk (Alt: BUK9608-55B118)
BUK9608-55 Nuevo y original
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