BUK9606-5

BUK9606-55B,118 vs BUK9606-55A,118

 
PartNumberBUK9606-55B,118BUK9606-55A,118
DescriptionMOSFET HIGH PERF TRENCHMOSMOSFET TAPE13 PWR-MOS
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V
Id Continuous Drain Current146 A154 A
Rds On Drain Source Resistance5.4 mOhms5.8 mOhms
Vgs Gate Source Voltage15 V15 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation258 W300 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101AEC-Q101
PackagingReelReel
Height4.5 mm4.5 mm
Length10.3 mm10.3 mm
Transistor Type1 N-Channel1 N-Channel
Width9.4 mm9.4 mm
BrandNexperiaNexperia
Fall Time106 ns235 ns
Product TypeMOSFETMOSFET
Rise Time95 ns180 ns
Factory Pack Quantity800800
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time117 ns420 ns
Typical Turn On Delay Time37 ns45 ns
Part # Aliases/T3 BUK9606-55B/T3 BUK9606-55A
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
BUK9606-55B,118 MOSFET HIGH PERF TRENCHMOS
BUK9606-55A,118 MOSFET TAPE13 PWR-MOS
BUK9606-55A,118 RF Bipolar Transistors MOSFET TAPE13 PWR-MOS
BUK9606-55B,118 RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
BUK9606-55A118 Now Nexperia BUK9606-55A - Power Field-Effect Transistor, 75A I(D), 55V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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