PartNumber | BUJ403A,127 | BUJ403A/DG,127 |
Description | Bipolar Transistors - BJT Trans GP BJT NPN 550V 6A 3-Pin(3+Tab) | Bipolar Transistors - BJT NPN POWER TRANSISTOR |
Manufacturer | WeEn Semiconductors | WeEn Semiconductors |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | E |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 |
Transistor Polarity | NPN | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 550 V | 550 V |
Collector Base Voltage VCBO | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 0.15 V | 0.15 V |
Maximum DC Collector Current | 6 A | 6 A |
Maximum Operating Temperature | + 150 C | + 150 C |
DC Current Gain hFE Max | 47 | 47 |
Height | 9.4 mm | - |
Length | 10.3 mm | - |
Width | 4.7 mm | - |
Brand | WeEn Semiconductors | WeEn Semiconductors |
DC Collector/Base Gain hfe Min | 13 | 13 |
Pd Power Dissipation | 100 W | 100 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | Transistors | Transistors |
Part # Aliases | 934054660127 | 934065586127 |
Unit Weight | 0.211644 oz | 0.211644 oz |