BTS244ZE306

BTS244ZE3062AATMA2 vs BTS244ZE3062A vs BTS244ZE3062AATMA1

 
PartNumberBTS244ZE3062AATMA2BTS244ZE3062ABTS244ZE3062AATMA1
DescriptionMOSFET N-Ch 55V 19A D2PAK-4Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETPower Field-Effect Transisto
ManufacturerInfineon--
Product CategoryMOSFET--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current19 A--
Rds On Drain Source Resistance13 mOhms--
Vgs th Gate Source Threshold Voltage1.6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge85 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation170 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min25 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesBTS244Z E3062A SP000910844--
Unit Weight0.056438 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BTS244ZE3062AATMA2 MOSFET N-Ch 55V 19A D2PAK-4
BTS244ZE3062AATMA2 MOSFET N-Ch 55V 19A D2PAK-4
BTS244ZE3062A Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS244ZE3062AATMA1 Power Field-Effect Transisto
BTS244ZE3062ANTMA1 - Bulk (Alt: BTS244ZE3062ANTMA1)
BTS244ZE3062ANTMA118 Nuevo y original
BTS244ZE3062ANTMA1180 Nuevo y original
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