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| PartNumber | BSZ180P03NS3GATMA1 | BSZ180P03NS3G |
| Description | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | TSDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 39.6 A | - |
| Rds On Drain Source Resistance | 13.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | - |
| Vgs Gate Source Voltage | 25 V | - |
| Qg Gate Charge | 30 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 40 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 1.1 mm | - |
| Length | 3.3 mm | - |
| Series | BSZ180P03 | BSZ180P03 |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 3.3 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 18 S | - |
| Fall Time | 3 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 11 ns | - |
| Factory Pack Quantity | 5000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | - |
| Typical Turn On Delay Time | 11 ns | - |
| Part # Aliases | BSZ180P03NS3 BSZ18P3NS3GXT G SP000709744 | - |
| Part Aliases | - | BSZ180P03NS3 BSZ180P03NS3GXT G SP000709744 |
| Package Case | - | TSDSON-8 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ180P03NS3GATMA1 | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | |
| BSZ180P03NS3GATMA1 | MOSFET P-CH 30V 39.6A TSDSON-8 | ||
| BSZ180P03NS3G | Nuevo y original |