BSZ165N04NS stock, BSZ165N04NS, BSZ165N04NS G


PartNumber	BSZ165N04NS G	BSZ165N04NSGATMA1
Description	MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3	MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TSDSON-8	TSDSON-8
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	40 V	40 V
Id Continuous Drain Current	31 A	31 A
Rds On Drain Source Resistance	13.8 mOhms	13.8 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	10 nC	10 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	25 W	25 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	1.1 mm	1.1 mm
Length	3.3 mm	3.3 mm
Series	OptiMOS 3	OptiMOS 3
Transistor Type	1 N-Channel	1 N-Channel
Width	3.3 mm	3.3 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	12 S	12 S
Fall Time	2.2 ns	2.2 ns
Product Type	MOSFET	MOSFET
Rise Time	1 ns	1 ns
Factory Pack Quantity	5000	5000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	6.8 ns	6.8 ns
Typical Turn On Delay Time	5.4 ns	5.4 ns
Part # Aliases	BSZ165N04NSGATMA1 BSZ165N4NSGXT SP000391523	BSZ165N04NS BSZ165N4NSGXT G SP000391523
Unit Weight	-	0.023210 oz

Search Part Number : "BSZ165N04NS", Match & Start with "BSZ165N04NS" - Total : 6

Fabricante	Parte #	Descripción
Infineon Technologies	BSZ165N04NS G	MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3
	BSZ165N04NSGATMA1	MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3
	BSZ165N04NS G	MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3
	BSZ165N04NSGATMA1	MOSFET N-CH 40V 31A TSDSON-8
	BSZ165N04NS	Nuevo y original
	BSZ165N04NSG	Nuevo y original

BSZ165N04NS