BSZ110N06

BSZ110N06NS3 G vs BSZ110N06NS3GATMA1 vs BSZ110N06NS3G

 
PartNumberBSZ110N06NS3 GBSZ110N06NS3GATMA1BSZ110N06NS3G
DescriptionMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSDSON-8TSDSON-8-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance11 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time6 ns--
Product TypeMOSFETMOSFET-
Rise Time77 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesBSZ110N06NS3GATMA1 BSZ11N6NS3GXT SP000453676BSZ110N06NS3 BSZ11N6NS3GXT G SP000453676-
Unit Weight0.003210 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSZ110N06NS3 G MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
BSZ110N06NS3GATMA1 MOSFET N-CH 60V 20A TSDSON-8
Infineon Technologies
Infineon Technologies
BSZ110N06NS3GATMA1 MOSFET MV POWER MOS
BSZ110N06NS3GXT Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ110N06NS3GATMA1)
BSZ110N06NS3G Nuevo y original
BSZ110N06NS3GATMA1-CUT TAPE Nuevo y original
BSZ110N06NS3 G IGBT Transistors MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
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