BSZ097N10NS5 stock, BSZ097N10NS5, BSZ097N10NS5


PartNumber	BSZ097N10NS5	BSZ097N10NS5ATMA1
Description	MOSFET N-Ch 100V 40A TSDSON-8	MOSFET N-Ch 100V 40A TSDSON-8
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	PG-TSDSON-8	TSDSON-8
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	100 V
Id Continuous Drain Current	40 A	40 A
Rds On Drain Source Resistance	13 mOhms	8.3 mOhms
Vgs th Gate Source Threshold Voltage	2.2 V	2.2 V
Vgs Gate Source Voltage	10 V	20 V
Qg Gate Charge	22 nC	28 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	69 W	69 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	1.1 mm	1.1 mm
Length	3.3 mm	3.3 mm
Series	OptiMOS 5	OptiMOS 5
Transistor Type	1 N-Channel	1 N-Channel
Width	3.3 mm	3.3 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	23 S	23 S
Fall Time	5 ns	5 ns
Product Type	MOSFET	MOSFET
Rise Time	5 ns	5 ns
Factory Pack Quantity	5000	5000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	21 ns	21 ns
Typical Turn On Delay Time	11 ns	11 ns
Part # Aliases	BSZ097N10NS5ATMA1 SP001132550	BSZ097N10NS5 SP001132550
Unit Weight	0.001295 oz	0.001295 oz

Search Part Number : "BSZ097N10NS5", Match & Start with "BSZ097N10NS5" - Total : 6

Fabricante	Parte #	Descripción
Infineon Technologies	BSZ097N10NS5	MOSFET N-Ch 100V 40A TSDSON-8
	BSZ097N10NS5ATMA1	MOSFET N-Ch 100V 40A TSDSON-8
	BSZ097N10NS5	Trans MOSFET N-CH 100V 40A 8-Pin TSDSON EP T/R
	BSZ097N10NS5ATMA1	RF Bipolar Transistors MOSFET N-Ch 100V 40A TSDSON-8
	BSZ097N10NS5ATMA	Nuevo y original
	BSZ097N10NS5ATMA1-CUT TAPE	Nuevo y original

BSZ097N10NS5