| PartNumber | BSS138P,215 | BSS138PW,115 | BSS138PS,115 |
| Description | MOSFET N-CH 60 V 360 mA | MOSFET N-CH 60 V 320 mA | MOSFET N-CH 60 V 320 mA |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-323-3 | TSSOP-6 |
| Number of Channels | 1 Channel | 1 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 360 mA | 320 mA | 320 mA |
| Rds On Drain Source Resistance | 1.6 Ohms | 1.6 Ohms | 1.6 Ohms |
| Vgs th Gate Source Threshold Voltage | 900 mV | 900 mV | 900 mV |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 0.72 nC | 0.72 nC | 0.72 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 420 mW | 310 mW | 320 mW |
| Configuration | Single | Single | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Transistor Type | 1 N-Channel Trench MOSFET | 1 N-Channel Trench MOSFET | 1 N-Channel |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 4 ns | 4 ns | 4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns | 3 ns | 3 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 9 ns | 9 ns | 9 ns |
| Typical Turn On Delay Time | 2 ns | 2 ns | 2 ns |
| Unit Weight | 0.000882 oz | 0.000176 oz | 0.000265 oz |
| Forward Transconductance Min | - | - | 700 mS |