PartNumber | BSP317P H6327 | BSP317PE6327 | BSP317PE6327T |
Description | MOSFET P-Ch -250V -430mA SOT-223-3 | MOSFET P-CH 250V 0.43A SOT223 | MOSFET P-CH 250V 0.43A SOT223 |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-223-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 250 V | - | - |
Id Continuous Drain Current | 430 mA | - | - |
Rds On Drain Source Resistance | 3 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | - 15.1 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.8 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.6 mm | - | - |
Length | 6.5 mm | - | - |
Series | BSP317 | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 3.5 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 380 mS | - | - |
Fall Time | 67 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 11.1 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 254 ns | - | - |
Typical Turn On Delay Time | 5.7 ns | - | - |
Part # Aliases | BSP317PH6327XTSA1 SP001058758 | - | - |
Unit Weight | 0.003951 oz | - | - |