BSO080P03NS3E

BSO080P03NS3E G vs BSO080P03NS3E vs BSO080P03NS3EG

 
PartNumberBSO080P03NS3E GBSO080P03NS3EBSO080P03NS3EG
DescriptionMOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current14.8 A--
Rds On Drain Source Resistance8 mOhms--
Vgs Gate Source Voltage25 V--
Qg Gate Charge- 61 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesOptiMOS 3P3--
Transistor Type1 P-Channel--
Width3.9 mm--
BrandInfineon Technologies--
Forward Transconductance Min44 S--
Fall Time19 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time47 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time64 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesBSO080P03NS3EGXUMA1 BSO8P3NS3EGXT SP000472992--
Unit Weight0.019048 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSO080P03NS3E G MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3
BSO080P03NS3EGXUMA1 MOSFET P-CH 30V 12A 8DSO
BSO080P03NS3E Nuevo y original
BSO080P03NS3E G Transistor MOSFET P-CH 30V 14.8A 2-Pin DSO T/R (Alt: BSO080P03NS3E G)
BSO080P03NS3EG Nuevo y original
BSO080P03NS3EGXT Trans MOSFET N-CH 30V 12A 8-Pin DSO - Tape and Reel (Alt: BSO080P03NS3EGXUMA1)
Top