 |  | |
| PartNumber | BSM50GAL120DN2 | BSM50GAL120DN2HOSA1 |
| Description | IGBT Modules 1200V 50A CHOPPER | MEDIUM POWER 34MM |
| Manufacturer | Infineon | - |
| Product Category | IGBT Modules | - |
| RoHS | Y | - |
| Product | IGBT Silicon Modules | - |
| Configuration | Half Bridge | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - |
| Collector Emitter Saturation Voltage | 2.5 V | - |
| Continuous Collector Current at 25 C | 78 A | - |
| Gate Emitter Leakage Current | 400 nA | - |
| Pd Power Dissipation | 400 W | - |
| Package / Case | Half Bridge GAL 1 | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Tray | - |
| Height | 30.5 mm | - |
| Length | 94 mm | - |
| Width | 34 mm | - |
| Brand | Infineon Technologies | - |
| Mounting Style | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | - |
| Product Type | IGBT Modules | - |
| Factory Pack Quantity | 10 | - |
| Subcategory | IGBTs | - |
| Part # Aliases | BSM50GAL120DN2HOSA1 SP000101727 | - |
| Unit Weight | 8.818490 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM50GAL120DN2 | IGBT Modules 1200V 50A CHOPPER | |
| BSM50GAL120DN2HOSA1 | MEDIUM POWER 34MM | ||
| BSM50GAL120DN2 | IGBT Modules 1200V 50A CHOPPER |