PartNumber | BSL207NH6327XTSA1 | BSL207N H6327 | BSL207NL6327HTSA1 |
Description | MOSFET SMALL SIGNAL+P-CH | MOSFET SMALL SIGNAL+P-CH | MOSFET 2N-CH 20V 2.1A 6TSOP |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSOP-6 | TSOP-6 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 2.1 A | 2.1 A | - |
Rds On Drain Source Resistance | 58 mOhms, 58 mOhms | 58 mOhms, 58 mOhms | - |
Vgs th Gate Source Threshold Voltage | 700 mV | 700 mV | - |
Vgs Gate Source Voltage | 12 V | 12 V | - |
Qg Gate Charge | 2.1 nC, 2.1 nC | 2.1 nC, 2.1 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Digi-ReelR |
Height | 1.1 mm | 1.1 mm | - |
Length | 3 mm | 3 mm | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Width | 1.5 mm | 1.5 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 7 S, 7 S | 7 S, 7 S | - |
Fall Time | 2.4 ns, 2.4 ns | 2.4 ns, 2.4 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 2.8 ns, 2.8 ns | 2.8 ns, 2.8 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 11 ns, 11 ns | 11 ns, 11 ns | - |
Typical Turn On Delay Time | 5.4 ns, 5.4 ns | 5.4 ns, 5.4 ns | - |
Part # Aliases | BSL207N H6327 SP001100648 | BSL207NH6327XTSA1 SP001100648 | - |
Unit Weight | 0.000522 oz | - | - |
Series | - | BSL207 | OptiMOS |
Package Case | - | - | SC-74, SOT-457 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | PG-TSOP6-6 |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 500mW |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | 419pF @ 10V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 2.1A |
Rds On Max Id Vgs | - | - | 70 mOhm @ 2.1A, 4.5V |
Vgs th Max Id | - | - | 1.2V @ 11μA |
Gate Charge Qg Vgs | - | - | 2.1nC @ 4.5V |