 |  | | |
| PartNumber | BSF134N10NJ3 G | BSF1306DSCC330MT | BSF134N10NJ3G |
| Description | MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 | Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | WDSON-2-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 13.4 mOhms | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.05 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | BSF134N10NJ3GXUMA1 BSF134N1NJ3GXT SP000604536 | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSF134N10NJ3 G | MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 | |
| BSF134N10NJ3GXUMA1 | MOSFET N-CH 100V 9A WDSON-2 | ||
Infineon Technologies |
BSF134N10NJ3GXUMA1 | MOSFET MV POWER MOS | |
| BSF1306DSCC330MT | Nuevo y original | ||
| BSF134N10NJ3G | Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSF134N10NJ3GXUMA1536 | Nuevo y original | ||
| BSF134N10NJ3 G | IGBT Transistors MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 |