BSF

BSF134N10NJ3 G vs BSF083N03LQ G vs BSF077N06NT3GXUMA1

 
PartNumberBSF134N10NJ3 GBSF083N03LQ GBSF077N06NT3GXUMA1
DescriptionMOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3MOSFET N-Ch 30V 13A CanPAK-2 SQMOSFET N-CH 60V 13A WDSON-2
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiGaN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseWDSON-2-3WDSON-2-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V30 V-
Id Continuous Drain Current40 A13 A-
Rds On Drain Source Resistance13.4 mOhms8.3 mOhms-
ConfigurationSingleSingle-
TradenameOptiMOS--
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon TechnologiesInfineon Technologies-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesBSF134N10NJ3GXUMA1 BSF134N1NJ3GXT SP000604536BSF083N03LQGXT-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-2.2 W-
Channel Mode-Enhancement-
Fall Time-2.8 ns-
Rise Time-3.2 ns-
Typical Turn Off Delay Time-14 ns-
Typical Turn On Delay Time-3.3 ns-
  • Empezar con
  • BSF 148
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSF134N10NJ3 G MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3
BSF077N06NT3GXUMA1 MOSFET N-CH 60V 13A WDSON-2
BSF134N10NJ3GXUMA1 MOSFET N-CH 100V 9A WDSON-2
BSF083N03LQ G MOSFET N-CH 30V 53A MG-WDSON-2
BSF134N10NJ3 G IGBT Transistors MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3
Infineon Technologies
Infineon Technologies
BSF083N03LQ G MOSFET N-Ch 30V 13A CanPAK-2 SQ
BSF134N10NJ3GXUMA1 MOSFET MV POWER MOS
BSF141-0909 SMA BLKD JACK .141 S/R
BSF077N06NT3 Nuevo y original
BSF077N06NT3 G MOSFET N-KANAL POWER MOS
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BSF1005RHGS100MT Nuevo y original
BSF1005RHGS100MT,BRL1608 Nuevo y original
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BSF1005RHGS561MT Nuevo y original
BSF110N06NT3G Nuevo y original
BSF1122 Nuevo y original
BSF1204RHSU-270MT Nuevo y original
BSF1205RHSU101MT Nuevo y original
BSF1207RHSU7R6NT Nuevo y original
BSF1265PIEL1R0MT Nuevo y original
BSF1306DSCC330MT Nuevo y original
BSF134N10NJ3GXUMA1536 Nuevo y original
BSF17 Nuevo y original
BSF17 A29T Nuevo y original
BSF1770PIEL100MT Nuevo y original
BSF1956J Nuevo y original
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BSF20/G1P Nuevo y original
BSF251 Nuevo y original
BSF2955K Nuevo y original
BSF2966K Nuevo y original
BSF2D18RHSU-100NT Nuevo y original
BSF2D18RHSU-220NT Nuevo y original
BSF2D18RHSU-3R3NT Nuevo y original
BSF2D18RHSU6R8NT Nuevo y original
BSF3010LQHMU100MT Nuevo y original
BSF3015LQHMU1R0NT Nuevo y original
BSF3953K Nuevo y original
BSF3957D Nuevo y original
BSF2-300ICV6M I-SenseModule 300A CL I
BSF073NE2LQG Nuevo y original
BSF20 Nuevo y original
BSF083N03LQG Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSF1004DTPIEL6R8MT Nuevo y original
BSF1004RHGS330MT Nuevo y original
BSF1004RHGS680MT Nuevo y original
BSF1005RHGS220MT,BRL1608 Nuevo y original
BSF134N10NJ3G Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSF110N06NT3GXUMA1 RF Bipolar Transistors MOSFET N-Ch 60V 47A CanPAK-3 ST
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