 | |  | |
| PartNumber | BSD816SNH6327XTSA1 | BSD840N H6327 | BSD816SNL6327HTSA1 |
| Description | Bipolar Transistors - BJT SMALL SIGNAL N-CH | MOSFET N-Ch 20V 880mA SOT-363-6 | MOSFET N-CH 20V 1.4A SOT363 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | Bipolar Transistors - BJT | MOSFET | - |
| RoHS | Y | Y | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Series | BSD816 | BSD840 | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | BJTs - Bipolar Transistors | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | MOSFETs | - |
| Part # Aliases | BSD816SN BSD816SNH6327XT H6327 SP000917670 | BSD840NH6327XTSA1 BSD84NH6327XT SP000917654 | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 880 mA | - |
| Rds On Drain Source Resistance | - | 270 mOhms, 270 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 300 mV | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Qg Gate Charge | - | 260 pC, 260 pC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 500 mW (1/2 W) | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Qualification | - | AEC-Q101 | - |
| Height | - | 0.9 mm | - |
| Length | - | 2 mm | - |
| Transistor Type | - | 2 N-Channel | - |
| Width | - | 1.25 mm | - |
| Forward Transconductance Min | - | 2.5 S, 2.5 S | - |
| Fall Time | - | 900 ps, 900 ps | - |
| Rise Time | - | 2.2 ns, 2.2 ns | - |
| Typical Turn Off Delay Time | - | 7.8 ns, 7.8 ns | - |
| Typical Turn On Delay Time | - | 1.9 ns, 1.9 ns | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSD816SNH6327XTSA1 | Bipolar Transistors - BJT SMALL SIGNAL N-CH | |
| BSD840NH6327XTSA1 | MOSFET N-Ch 20V 880mA SOT-363-6 | ||
| BSD840N H6327 | MOSFET N-Ch 20V 880mA SOT-363-6 | ||
| BSD840NH6327XT | MOSFET N-Ch 20V 880mA SOT-363-6 | ||
| BSD816SNL6327HTSA1 | MOSFET N-CH 20V 1.4A SOT363 | ||
| BSD840N L6327 | MOSFET 2N-CH 20V 0.88A SOT363 | ||
| BSD840NH6327XTSA1 | MOSFET 2N-CH 20V 0.88A SOT363 | ||
| BSD816SNH6327XTSA1 | Bipolar Transistors - BJT SMALL SIGNAL N-CH | ||
Infineon Technologies |
BSD840N L6327 | MOSFET N-Ch 20V 880mA SOT-365-6 | |
| BSD81 | Nuevo y original | ||
| BSD816SN | Nuevo y original | ||
| BSD816SN H6327 | Nuevo y original | ||
| BSD816SN L6327 | MOSFET N-Ch 20V 1.4A SOT-365-6 | ||
| BSD816SNH6327 | Small Signal Field-Effect Transisto | ||
| BSD816SNL6327 | Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSD840N | Nuevo y original | ||
| BSD840N H6327 | Nuevo y original | ||
| BSD840N6327 | Nuevo y original | ||
| BSD840NH6327 | Nuevo y original | ||
| BSD840NL6327 | Nuevo y original | ||
| BSD840NL6327XT | Nuevo y original | ||
| BSD840NH6327XTSA1-CUT TAPE | Nuevo y original |