 |  | | |
| PartNumber | BSC520N15NS3 G | BSC520N15NS | BSC520N15NS3 |
| Description | MOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3 | ||
| Manufacturer | Infineon | FEELING | INFINEO |
| Product Category | MOSFET | FETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 21 A | - | - |
| Rds On Drain Source Resistance | 52 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 8.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 57 W | - | - |
| Configuration | Single | - | Single |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | - | Reel |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | - | OptiMOS 3 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 21 S, 11 S | - | - |
| Fall Time | 3 ns | - | 3 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | - | 4 ns |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns | - | 10 ns |
| Typical Turn On Delay Time | 7 ns | - | 7 ns |
| Part # Aliases | BSC520N15NS3GATMA1 BSC52N15NS3GXT SP000521716 | - | - |
| Unit Weight | 0.007055 oz | - | - |
| Part Aliases | - | - | BSC520N15NS3GATMA1 BSC520N15NS3GXT SP000521716 |
| Package Case | - | - | TDSON-8 |
| Pd Power Dissipation | - | - | 57 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 21 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 52 mOhms |
| Qg Gate Charge | - | - | 8.7 nC |
| Forward Transconductance Min | - | - | 21 S 11 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC520N15NS3 G | MOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3 | |
| BSC520N15NS3GATMA1 | MOSFET N-CH 150V 21A TDSON-8 | ||
Infineon Technologies |
BSC520N15NS3GATMA1 | MOSFET MV POWER MOS | |
| BSC520N15NS | Nuevo y original | ||
| BSC520N15NS3 | Nuevo y original | ||
| BSC520N15NS3 G | Trans MOSFET N-CH 150V 21A 8-Pin TDSON T/R (Alt: BSC520N15NS3 G) | ||
| BSC520N15NS3G | Nuevo y original | ||
| BSC52N03S | Nuevo y original |