 | | | |
| PartNumber | BSC252N10NSFGXT | BSC252N10NSFGATMA1 | BSC252N10NSF G |
| Description | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 40 A | 40 A | 40 A |
| Rds On Drain Source Resistance | 19.5 mOhms | 19.5 mOhms | 19.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 17 nC | 17 nC | 17 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 78 W | 78 W | 78 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 18 S | 18 S | 18 S |
| Fall Time | 4 ns | 4 ns | 4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 21 ns | 21 ns | 21 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | 16 ns | 16 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 11 ns |
| Part # Aliases | BSC252N10NSF BSC252N10NSFGATMA1 G SP000379608 | BSC252N10NSF BSC252N1NSFGXT G SP000379608 | BSC252N10NSFGATMA1 BSC252N1NSFGXT SP000379608 |
| Tradename | - | OptiMOS | OptiMOS |
| Series | - | OptiMOS 2 | OptiMOS 2 |
| Unit Weight | - | 0.005609 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC252N10NSFGXT | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | |
| BSC252N10NSFGATMA1 | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | ||
| BSC252N10NSF G | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | ||
| BSC252N10NSFGATMA1 | MOSFET N-CH 100V 40A TDSON-8 | ||
| BSC25-0218M | Nuevo y original | ||
| BSC25-0239D | Nuevo y original | ||
| BSC252N10NS | Nuevo y original | ||
| BSC252N10NSF | Nuevo y original | ||
| BSC252N10NSFG | Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R (Alt: BSC252N10NSF G) | ||
| BSC252N10NSFGATMA1 , TDZ | Nuevo y original | ||
| BSC252N10NSFGXT | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | ||
| BSC252N10NSF G | IGBT Transistors MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 |