 | | | |
| PartNumber | BSC123N08NS3 G | BSC123N08NS3GATMA1 | BSC123N10LS G |
| Description | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | PG-TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | 100 V |
| Id Continuous Drain Current | 55 A | 55 A | 71 A |
| Rds On Drain Source Resistance | 10.3 mOhms | 12.3 mOhms | 10 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Qg Gate Charge | 25 nC | 19 nC | 68 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 66 W | 66 W | 114 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 22 S | 22 S | 49 S |
| Fall Time | 4 ns | 4 ns | 7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 18 ns | 18 ns | 25 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 19 ns | 41 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns | 18 ns |
| Part # Aliases | BSC123N08NS3GATMA1 BSC123N8NS3GXT SP000443916 | BSC123N08NS3 BSC123N8NS3GXT G SP000443916 | BSC123N10LSGATMA1 BSC123N1LSGXT SP000379612 |
| Unit Weight | 0.003527 oz | 0.006067 oz | - |
| Development Kit | - | EVAL_1K4W_ZVS_FB_CFD7 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC123N08NS3 G | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | |
| BSC123N08NS3GATMA1 | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | ||
| BSC123N10LS G | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
| BSC123N10LSGATMA1 | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
| BSC123N08NS3GATMA1 | MOSFET N-CH 80V 55A TDSON-8 | ||
| BSC123N10LSGATMA1 | MOSFET N-CH 100V 71A TDSON-8 | ||
| BSC123N08NS3GXT | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) | ||
| BSC123N08N | Nuevo y original | ||
| BSC123N08NS3 | Nuevo y original | ||
| BSC123N08NS3 G | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP | ||
| BSC123N08NS3G | Trans MOSFET N-CH 80V 11A 8-Pin TDSON (Alt: BSC123N08NS3 G) | ||
| BSC123N08NS3GATMA1 , TDZ | Nuevo y original | ||
| BSC123N10LS | Nuevo y original | ||
| BSC123N10LS G | Nuevo y original | ||
| BSC123N10LSG | Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP | ||
| BSC123N10LSGATMA1 , TDZ7 | Nuevo y original | ||
| BSC123N10LS G | RF Bipolar Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 |