BSC090N03L

BSC090N03LS G vs BSC090N03LS vs BSC090N03LSG

 
PartNumberBSC090N03LS GBSC090N03LSBSC090N03LSG
DescriptionMOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineonINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current48 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation32 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min28 S--
Fall Time2.4 ns--
Product TypeMOSFET--
Rise Time2.6 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time3.1 ns--
Part # AliasesBSC090N03LSGATMA1 BSC9N3LSGXT SP000275115--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSC090N03LS G MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
BSC090N03LSGATMA1 MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
BSC090N03LSGATMA1 MOSFET N-CH 30V 48A TDSON-8
BSC090N03LS Nuevo y original
BSC090N03LS G Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC090N03LS G)
BSC090N03LSG Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC090N03LSGATMA1-CUT TAPE Nuevo y original
Top