PartNumber | BSC0902NSI | BSC0902NS | BSC0902NSATMA1 |
Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 100 A | 100 A | 100 A |
Rds On Drain Source Resistance | 2.2 mOhms | 2.2 mOhms | 2.2 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2.5 W | 48 W | 48 W |
Configuration | Single | Single | Single |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 110 S, 55 S | 55 S | 55 S |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | BSC0902NSIATMA1 BSC92NSIXT SP000854380 | BSC0902NSATMA1 BSC92NSXT SP000800246 | BSC0902NS BSC92NSXT SP000800246 |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
Qg Gate Charge | - | 35 nC | 35 nC |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | 3.6 ns | 3.6 ns |
Rise Time | - | 5.2 ns | 5.2 ns |
Typical Turn Off Delay Time | - | 21 ns | 21 ns |
Typical Turn On Delay Time | - | 4.2 ns | 4.2 ns |
Unit Weight | - | - | 0.007055 oz |