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| PartNumber | BSC076N06NS3GATMA1 | BSC076N06NS3G | BSC076N06NS3GATMA1 , TDA |
| Description | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: BSC076N06NS3 G) | |
| Manufacturer | Infineon | INF | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 7.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 37 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | BSC076N06NS3 BSC76N6NS3GXT G SP000453656 | - | - |
| Unit Weight | 0.010582 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC076N06NS3GATMA1 | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | |
| BSC076N06NS3GATMA1 | MOSFET N-CH 60V 50A TDSON-8 | ||
| BSC076N06NS3G | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: BSC076N06NS3 G) | ||
| BSC076N06NS3GATMA1 , TDA | Nuevo y original |