PartNumber | BSC052N03LS | BSC052N03LSATMA1 | BSC052N03S G |
Description | MOSFET N-Ch 30V 57A TDSON-8 OptiMOS | MOSFET LV POWER MOS | MOSFET N-Ch 30V 80A TDSON-8 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PG-TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | 30 V |
Id Continuous Drain Current | 57 A | - | 80 A |
Rds On Drain Source Resistance | 5.2 mOhms | - | 8.2 mOhms |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | 20 V |
Qg Gate Charge | 12 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 28 W | - | 2.8 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 38 S | - | - |
Fall Time | 2.4 ns | - | 4 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3.6 nS | - | 5 ns |
Factory Pack Quantity | 5000 | - | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 nS | - | 23 ns |
Typical Turn On Delay Time | 2.4 ns | - | 5.9 ns |
Part # Aliases | BSC052N03LSATMA1 BSC52N3LSXT SP000807602 | BSC052N03LS BSC52N3LSXT SP000807602 | BSC052N03SGXT |
Unit Weight | 0.003527 oz | - | - |