BSC032N04

BSC032N04LSATMA1 vs BSC032N04LS vs BSC032N04LSATMA1-CUT TAPE

 
PartNumberBSC032N04LSATMA1BSC032N04LSBSC032N04LSATMA1-CUT TAPE
DescriptionMOSFET MV POWER MOSMOSFET DIFFERENTIATED MOSFETS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8PG-TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current98 A98 A-
Rds On Drain Source Resistance2.5 mOhms3.2 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge35 nC25 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation52 W52 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min75 S75 S-
Fall Time3 ns3 ns-
Product TypeMOSFETMOSFET-
Rise Time4 ns4 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time4 ns4 ns-
Part # AliasesBSC032N04LS SP001067018BSC032N04LSATMA1 SP001067018-
Unit Weight-0.003527 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSC032N04LSATMA1 MOSFET MV POWER MOS
BSC032N04LS MOSFET DIFFERENTIATED MOSFETS
BSC032N04LSATMA1 MOSFET N-CH 40V 21A 8TDSON
BSC032N04LSATMA1-CUT TAPE Nuevo y original
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