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| PartNumber | BSC026N02KSGAUMA1 | BSC026N02KSG |
| Description | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | |
| Product Category | MOSFET | FETs - Single |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TDSON-8 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 100 A | - |
| Rds On Drain Source Resistance | 2.1 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 700 mV | - |
| Vgs Gate Source Voltage | 12 V | - |
| Qg Gate Charge | 52.7 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 78 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | - |
| Packaging | Reel | - |
| Height | 1.27 mm | - |
| Length | 5.9 mm | - |
| Series | OptiMOS 2 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 5.15 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 95 S | - |
| Fall Time | 9 ns | - |
| Moisture Sensitive | Yes | - |
| Product Type | MOSFET | - |
| Rise Time | 115 ns | - |
| Factory Pack Quantity | 5000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 52 ns | - |
| Typical Turn On Delay Time | 21 ns | - |
| Part # Aliases | BSC026N02KS BSC26N2KSGXT G SP000379664 | - |
| Unit Weight | 0.070548 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC026N02KSGAUMA1 | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | |
| BSC026N02KSGAUMA1 | MOSFET N-CH 20V 100A TDSON-8 | ||
| BSC026N02KSG | Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |