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| PartNumber | BSC016N03LSGATMA1 | BSC016N03LS G |
| Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 100 A | 100 A |
| Rds On Drain Source Resistance | 1.3 mOhms | 1.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 131 nC | 131 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 125 W | 125 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 65 S | 65 S |
| Fall Time | 8.6 ns | 8.6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8.6 ns | 8.6 ns |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 51 ns | 51 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns |
| Part # Aliases | BSC016N03LS BSC16N3LSGXT G SP000237663 | BSC016N03LSGATMA1 BSC16N3LSGXT SP000237663 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC016N03LSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | |
| BSC016N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03LSGATMA1 | MOSFET N-CH 30V 100A TDSON8 | ||
| BSC016N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03LSGXT/BKN | INSTOCK | ||
| BSC016N03LSG , TDA18275A | Nuevo y original | ||
| BSC016N03LSGATMA1 , TDA1 | Nuevo y original | ||
| BSC016N03LS | Nuevo y original | ||
| BSC016N03LSGXT | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03LSG | Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |