PartNumber | BFY42 | BFY420(ES)/ESA | BFY420 (P) |
Description | RF Bipolar Transistors HiRel NPN Silicon RF Transisto | ||
Manufacturer | - | - | Infineon Technologies |
Product Category | - | - | RF Transistors (BJT) |
Packaging | - | - | Bulk |
Part Aliases | - | - | BFY420PNZ BFY420PZZZA1 SP000011414 |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | Micro-X |
Technology | - | - | Si |
Configuration | - | - | Single Dual Emitter |
Transistor Type | - | - | Bipolar |
Pd Power Dissipation | - | - | 160 mW |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 65 C |
Operating Frequency | - | - | 22000 MHz |
Collector Emitter Voltage VCEO Max | - | - | 4.5 V |
Transistor Polarity | - | - | NPN |
Emitter Base Voltage VEBO | - | - | 1.5 V |
Maximum DC Collector Current | - | - | 0.035 A |
Continuous Collector Current | - | - | 35 mA |
DC Collector Base Gain hfe Min | - | - | 50 at 5 mA at 1 V |