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| PartNumber | BFQ19SH6327XTSA1 |
| Description | Bipolar Transistors - BJT RF BIP TRANSISTORS |
| Manufacturer | Infineon |
| Product Category | Bipolar Transistors - BJT |
| RoHS | Y |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-89-4 |
| Transistor Polarity | NPN |
| Configuration | Single |
| Collector Emitter Voltage VCEO Max | 15 V |
| Collector Base Voltage VCBO | 20 V |
| Emitter Base Voltage VEBO | 3 V |
| Gain Bandwidth Product fT | 5.5 GHz |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| DC Current Gain hFE Max | 140 |
| Height | 1.5 mm |
| Length | 4.5 mm |
| Packaging | Reel |
| Width | 2.5 mm |
| Brand | Infineon Technologies |
| Continuous Collector Current | 120 mA |
| DC Collector/Base Gain hfe Min | 70 |
| Pd Power Dissipation | 1 W |
| Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Part # Aliases | 19S BFQ H6327 SP001125294 |
| Unit Weight | 0.004603 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BFQ19SH6327XTSA1 | Bipolar Transistors - BJT RF BIP TRANSISTORS |