 |  | | |
| PartNumber | BD809G | BD809 | BD809G. |
| Description | Bipolar Transistors - BJT 10A 80V 90W NPN | Bipolar Transistors - BJT 10A 80V 90W NPN | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1.1 V | 1.1 V | - |
| Maximum DC Collector Current | 10 A | 10 A | - |
| Gain Bandwidth Product fT | 1.5 MHz | 1.5 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BD809 | BD809 | - |
| Height | 15.75 mm | - | - |
| Length | 10.53 mm | - | - |
| Packaging | Tube | Tube | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 10 A | 10 A | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Pd Power Dissipation | 90 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 90 W | - |
| Collector Emitter Voltage VCEO Max | - | 80 V | - |
| Collector Base Voltage VCBO | - | 80 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| DC Collector Base Gain hfe Min | - | 30 | - |
