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| PartNumber | BD245A-S | BD245 | BD245A |
| Description | Bipolar Transistors - BJT 60V 10A NPN | Bipolar Transistors - BJT 80W NPN Silicon | |
| Manufacturer | Bourns | TOSHIBA | - |
| Product Category | Bipolar Transistors - BJT | IC Chips | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-93-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 10 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Height | 12.2 mm | - | - |
| Length | 15.2 mm | - | - |
| Width | 4.9 mm | - | - |
| Brand | Bourns | - | - |
| Continuous Collector Current | 10 A | - | - |
| DC Collector/Base Gain hfe Min | 40 at 1 A, 4 V, 20 at 3 A, 4 V, 4 at 10 A, 4 V | - | - |
| Pd Power Dissipation | 80 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 300 | - | - |
| Subcategory | Transistors | - | - |