BD13610 stock, BD13610, BD13610STU


PartNumber	BD13610STU	BD13610S	BD13610
Description	Bipolar Transistors - BJT PNP Si Transistor Epitaxial	Bipolar Transistors - BJT PNP Si Transistor Epitaxial	Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-126-3	TO-126-3	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	- 45 V	- 45 V	-
Collector Base Voltage VCBO	- 45 V	- 45 V	-
Emitter Base Voltage VEBO	- 5 V	- 5 V	-
Collector Emitter Saturation Voltage	- 0.5 V	- 500 mV	-
Maximum DC Collector Current	1.5 A	- 1.5 A	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	BD136	BD136	-
DC Current Gain hFE Max	250	250	-
Height	11 mm	11 mm	-
Length	8 mm	8 mm	-
Packaging	Tube	Bulk	-
Width	3.25 mm	3.25 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Continuous Collector Current	- 1.5 A	- 1.5 A	-
DC Collector/Base Gain hfe Min	40	40	-
Pd Power Dissipation	12.5 W	12.5 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	1920	2000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.026843 oz	0.026843 oz	-

Search Part Number : "BD13610", Match & Start with "BD13610" - Total : 5

Fabricante	Parte #	Descripción
ON Semiconductor / Fairchild	BD13610STU	Bipolar Transistors - BJT PNP Si Transistor Epitaxial
ON Semiconductor / Fairchild	BD13610S	Bipolar Transistors - BJT PNP Si Transistor Epitaxial
	BD13610	Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ON Semiconductor	BD13610STU	TRANS PNP 45V 1.5A TO-126
ON Semiconductor	BD13610S	TRANS PNP 45V 1.5A TO-126

BD13610