BCY59-V

BCY59-VIII vs BCY59-VII vs BCY59-VIII PBFREE

 
PartNumberBCY59-VIIIBCY59-VIIBCY59-VIII PBFREE
DescriptionBipolar Transistors - BJT NPN 45Vcbo 7.0Vebo 100mA 340mW 1WBipolar Transistors - BJT NPN 45Vcbo 7.0Vebo 100mA 340mW 1W
ManufacturerCentral SemiconductorCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-18TO-18-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max45 V45 V-
Collector Base Voltage VCBO45 V45 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage0.7 V0.7 V-
Maximum DC Collector Current200 mA200 mA-
Gain Bandwidth Product fT150 MHz150 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 200 C+ 200 C-
PackagingBulkBulk-
BrandCentral SemiconductorCentral Semiconductor-
Continuous Collector Current100 mA100 mA-
DC Collector/Base Gain hfe Min20 At 10 uA, 5 V40 At 100 mA, 1 V-
Pd Power Dissipation340 mW340 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
Part # AliasesBCY59-VIII PBFREEBCY59-VII PBFREE-
Unit Weight0.011020 oz--
Fabricante Parte # Descripción RFQ
Central Semiconductor
Central Semiconductor
BCY59-VIII Bipolar Transistors - BJT NPN 45Vcbo 7.0Vebo 100mA 340mW 1W
BCY59-VII Bipolar Transistors - BJT NPN 45Vcbo 7.0Vebo 100mA 340mW 1W
STMicroelectronics
STMicroelectronics
BCY59-VII THROUGH-HOLE TRANSISTOR-SMALL SI
BCY59-VIII PBFREE Nuevo y original
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