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| PartNumber | BCX5610TA | BCX5610H6327XTSA1 | BCX5610 |
| Description | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K | Bipolar Transistors - BJT AF TRANSISTORS | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA |
| Manufacturer | Diodes Incorporated | Infineon | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-89-3 | SOT-89-4 | - |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 500 mV | - | 500 mV |
| Maximum DC Collector Current | 1 A | - | 1 A |
| Gain Bandwidth Product fT | 150 MHz | - | 150 MHz |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | BCX56 | - | BCX56 |
| DC Current Gain hFE Max | 160 | - | 160 |
| Height | 1.5 mm | - | - |
| Length | 4.6 mm | - | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Width | 2.6 mm | - | - |
| Brand | Diodes Incorporated | Infineon Technologies | - |
| DC Collector/Base Gain hfe Min | 63 | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.001834 oz | - | 0.001834 oz |
| Part # Aliases | - | 56-10 BCX H6327 SP001125480 | - |
| Package Case | - | - | TO-243AA |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-89 |
| Power Max | - | - | 1W |
| Transistor Type | - | - | NPN |
| Current Collector Ic Max | - | - | 1A |
| Voltage Collector Emitter Breakdown Max | - | - | 80V |
| DC Current Gain hFE Min Ic Vce | - | - | 63 @ 150mA, 2V |
| Vce Saturation Max Ib Ic | - | - | 500mV @ 50mA, 500mA |
| Current Collector Cutoff Max | - | - | 100nA (ICBO) |
| Frequency Transition | - | - | 150MHz |
| Pd Power Dissipation | - | - | 1000 mW |
| Collector Emitter Voltage VCEO Max | - | - | 80 V |
| Collector Base Voltage VCBO | - | - | 100 V |
| Emitter Base Voltage VEBO | - | - | 6 V |
| DC Collector Base Gain hfe Min | - | - | 63 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
BCX5610TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K | |
Infineon Technologies |
BCX5610H6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTORS | |
| BCX5610H6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTORS | ||
| BCX5610 | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA | ||
| BCX5610TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K |