PartNumber | BCX55H6327XTSA1 | BCX55H6327 |
Description | Bipolar Transistors - BJT AF TRANSISTORS | |
Manufacturer | Infineon | - |
Product Category | Bipolar Transistors - BJT | - |
RoHS | Y | - |
Mounting Style | SMD/SMT | - |
Package / Case | SOT-89-4 | - |
Transistor Polarity | NPN | - |
Configuration | Single | - |
Collector Emitter Voltage VCEO Max | 60 V | - |
Collector Base Voltage VCBO | 60 V | - |
Emitter Base Voltage VEBO | 5 V | - |
Collector Emitter Saturation Voltage | 0.5 V | - |
Maximum DC Collector Current | 1.5 A | - |
Gain Bandwidth Product fT | 100 MHz | - |
Minimum Operating Temperature | - 65 C | - |
Maximum Operating Temperature | + 150 C | - |
DC Current Gain hFE Max | 250 | - |
Packaging | Reel | - |
Brand | Infineon Technologies | - |
Continuous Collector Current | 1 A | - |
DC Collector/Base Gain hfe Min | 40 | - |
Pd Power Dissipation | 2 W | - |
Product Type | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 1000 | - |
Subcategory | Transistors | - |
Part # Aliases | 55 BCX H6327 SP001125470 | - |