PartNumber | BCX42E6327HTSA1 | BCX42E6327 | BCX42E6327XT |
Description | Bipolar Transistors - BJT PNP Silicn AF/Switch TRANSISTOR | ||
Manufacturer | Infineon | INFINEO | - |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-23-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 125 V | - | - |
Collector Base Voltage VCBO | 125 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 0.9 V | - | - |
Maximum DC Collector Current | 1 A | - | - |
Gain Bandwidth Product fT | 150 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | BCX42 | - | - |
Packaging | Reel | - | - |
Brand | Infineon Technologies | - | - |
Continuous Collector Current | 800 mA | - | - |
Pd Power Dissipation | 330 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 42 B BAT17E6327HTSA1 BCX BCX42E6327XT E6327 SP000010900 | - | - |
Unit Weight | 0.000282 oz | - | - |