 |  | | |
| PartNumber | BCW67BE6327HTSA1 | BCW67BE6327 | BCW67BE6327XT |
| Description | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | |
| Manufacturer | Infineon | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 32 V | - | - |
| Collector Base Voltage VCBO | 45 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.3 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 200 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCW67 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 800 mA | - | - |
| DC Collector/Base Gain hfe Min | 160 | - | - |
| Pd Power Dissipation | 330 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 67B BCW BCW67BE6327XT E6327 SP000015035 | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BCW67BE6327HTSA1 | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | |
| BCW67BE6327XT | Nuevo y original | ||
| BCW67BE6327HTSA1 | TRANS PNP 32V 0.8A SOT-23 | ||
| BCW67BE6327 | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |