BCW66GLT1

BCW66GLT1G vs BCW66GLT1 vs BCW66GLT1G , MAX6449UT23

 
PartNumberBCW66GLT1GBCW66GLT1BCW66GLT1G , MAX6449UT23
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 45VTRANS NPN 45V 0.8A SOT-23
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO75 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.7 V0.7 V-
Maximum DC Collector Current0.8 A0.8 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBCW66BCW66-
Height0.94 mm--
Length2.9 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current800 mA800 mA-
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.001376 oz0.007090 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3 (TO-236)-
Power Max-300mW-
Transistor Type-NPN-
Current Collector Ic Max-800mA-
Voltage Collector Emitter Breakdown Max-45V-
DC Current Gain hFE Min Ic Vce-160 @ 100mA, 1V-
Vce Saturation Max Ib Ic-700mV @ 50mA, 500mA-
Current Collector Cutoff Max-20nA-
Frequency Transition-100MHz-
Pd Power Dissipation-225 mW-
Collector Emitter Voltage VCEO Max-45 V-
Collector Base Voltage VCBO-75 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-110-
Fabricante Parte # Descripción RFQ
BCW66GLT1G Bipolar Transistors - BJT SS GP XSTR NPN 45V
BCW66GLT1G-CUT TAPE Nuevo y original
ON Semiconductor
ON Semiconductor
BCW66GLT1 TRANS NPN 45V 0.8A SOT-23
BCW66GLT1G , MAX6449UT23 Nuevo y original
BCW66GLT1G(EG) Nuevo y original
BCW66GLT1G Bipolar Transistors - BJT SS GP XSTR NPN 45V
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