 |  |  | |
| PartNumber | BCP55TA | BCP55TF | BCP55T1G |
| Description | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K | Bipolar Transistors - BJT BCP55T_SER - 60 V, 1 A NPN medium power transistors | |
| Manufacturer | Diodes Incorporated | Nexperia | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | SC-73-4 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 60 V | 60 V | - |
| Collector Base Voltage VCBO | 60 V | 60 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 500 mV | 500 mV | - |
| Maximum DC Collector Current | 1 A | 2 A | - |
| Gain Bandwidth Product fT | 150 MHz | 155 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BCP55 | - | - |
| DC Current Gain hFE Max | 250 | 250 | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Nexperia | - |
| DC Collector/Base Gain hfe Min | 40 | 63 | - |
| Pd Power Dissipation | 2000 mW | 0.6 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 4000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.003951 oz | - | - |
| Technology | - | Si | - |
| Continuous Collector Current | - | 1 A | - |
| Qualification | - | AEC-Q101 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
BCP55TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K | |
Nexperia |
BCP55TF | Bipolar Transistors - BJT BCP55T_SER - 60 V, 1 A NPN medium power transistors | |
ON Semiconductor |
BCP55T1G | Nuevo y original | |
| BCP55TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K |