 |  | | |
| PartNumber | BCP5516TA | BCP5516 | BCP5516E6327 |
| Description | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCP55 | - | - |
| Height | 1.65 mm | - | - |
| Length | 6.7 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Pd Power Dissipation | 2000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
BCP5516TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K | |
| BCP5516 | Nuevo y original | ||
| BCP5516E6327 | Nuevo y original | ||
| BCP5516TA-79 | Nuevo y original | ||
| BCP5516TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K | ||
Infineon Technologies |
BCP5516E6327HTSA1 | Nuevo y original | |
| BCP5516H6327XTSA1 | TRANS NPN 60V 1A SOT223 |