 |  | | |
| PartNumber | BCP5316TA | BCP5316T1G | BCP5316T1 |
| Description | Bipolar Transistors - BJT PNP Medium Power | PNP SILICON EPITAXIAL TRANSISTOR CASE 318E-04, 4 PIN | |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 80 V | - | - |
| Collector Base Voltage VCBO | - 100 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.5 V | - | - |
| Maximum DC Collector Current | - 1 A | - | - |
| Gain Bandwidth Product fT | 125 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCP53 | - | - |
| DC Current Gain hFE Max | 250 at - 150 mA, - 2 V | - | - |
| Height | 1.65 mm | - | - |
| Length | 6.7 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Continuous Collector Current | - 1 A | - | - |
| DC Collector/Base Gain hfe Min | 25 at - 5 mA, - 2 V | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
BCP5316TA | Bipolar Transistors - BJT PNP Medium Power | |
ON Semiconductor |
BCP5316T1G | Nuevo y original | |
| BCP5316TA , SCI7711YBA , | Nuevo y original | ||
| BCP5316T1 | PNP SILICON EPITAXIAL TRANSISTOR CASE 318E-04, 4 PIN | ||
| BCP5316TC | Trans GP BJT PNP 80V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
| BCP5316TA | Bipolar Transistors - BJT PNP Medium Powe |