 |  | | |
| PartNumber | BCM856BS,115 | BCM856BS/ZLH | BCM856BS/ZLX |
| Description | Bipolar Transistors - BJT COMPLEX DISCRETE S2022D/SOT45 | TRANS 2NPN 45V 0.1A 6TSSOP | TRANS 2NPN 45V 0.1A 6TSSOP |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSSOP-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | - 65 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Maximum DC Collector Current | - 200 mA | - | - |
| Gain Bandwidth Product fT | 175 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.35 mm | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 290 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.035274 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
BCM856DS,115 | Bipolar Transistors - BJT COMPLEX DISCRETE S2023D/SOT45 | |
| BCM856BSH | Bipolar Transistors - BJT BCM856BS/SC-88/REEL 7" Q3/T4 * | ||
| BCM856BS,115 | Bipolar Transistors - BJT COMPLEX DISCRETE S2022D/SOT45 | ||
| BCM856BSF | Bipolar Transistors - BJT BCM856BS/SC-88/REEL 13" Q1/T1 | ||
| BCM856BSF | BCM856BS/SOT363/SC-88 | ||
| BCM856BS/ZLH | TRANS 2NPN 45V 0.1A 6TSSOP | ||
| BCM856BS/ZLX | TRANS 2NPN 45V 0.1A 6TSSOP | ||
| BCM856BSH | TRANS 2PNP 65V 0.1A 6TSSOP | ||
| BCM856BS,115 | Bipolar Transistors - BJT COMPLEX DISCRETE S2022D/SOT45 | ||
| BCM856DS,115 | Bipolar Transistors - BJT COMPLEX DISCRETE S2023D/SOT45 | ||
Infineon Technologies |
BCM856SH6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTOR | |
| BCM856SE6327 | 100 MA, 65 V, 2 CHANNEL, PNP, SI, SMALL SIGNAL TRANSISTOR | ||
| BCM856SE6327BTSA1 | TRANS 2PNP 65V 0.1A SOT363 | ||
| BCM856SH6327XTSAI | Nuevo y original | ||
| BCM856SH6778 | TRANS 2PNP 65V 0.1A SOT363 | ||
| BCM856SH6778XTSA1 | TRANS 2PNP 65V 0.1A SOT363 | ||
| BCM856SH6433XTMA1 | TRANS 2PNP 65V 0.1A SOT363 | ||
| BCM856SH6327XTSA1 | TRANS 2PNP 65V 0.1A SOT363 | ||
| BCM85622IFSBG | ADVANCED BASEBAND SYSTEM-ON-A- | ||
| BCM856BS 115 | Nuevo y original | ||
| BCM856S | SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 65V V(BR)CEO, 2-ELEMENT, PNP, SILICON | ||
| BCM856S E6327 | Nuevo y original | ||
| BCM856S H6327 | Nuevo y original | ||
| BCM856SH6327 | Transistor: PNP x2, bipolar, 65V, 100mA, 250mW, SOT363 | ||
| BCM856SH6778XT | Trans GP BJT PNP 65V 0.1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BCM856SH6778XTSA1) | ||
| BCM856SH6433 | Nuevo y original | ||
| BCM85620WIFSBG | BASEBAND & NETWORKING SOC 112 | ||
| BCM85620IFSBG P20 | Nuevo y original | ||
| BCM856DSDG | Nuevo y original | ||
| BCM85622WIFSBG | ADVANCED BASEBAND SYSTEM-ON-A- | ||
| BCM85625IFSBG | ADVANCED BASEBAND SYSTEM-ON-A- | ||
| BCM85626IFSBG | ADVANCED BASEBAND SYSTEM-ON-A- | ||
| BCM85620IFSBG | ADVANCED BASEBAND SYSTEM-ON-A- | ||
| BCM85652IFSBG | Nuevo y original | ||
NXP Semiconductors |
BCM856BS | TRANSISTOR,PNP/PNP MATCHED,SOT363, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-65V, Power Dissipation Pd:300mW, DC Collector Current:-100mA, DC Current Gain hFE:290hFE, No. of P | |
| BCM856BS/DG | Nuevo y original | ||
| BCM856BS115 | Nuevo y original | ||
| BCM856DS/DG | Nuevo y original | ||
| BCM856DS/DG , SCI7700YNA | Nuevo y original |