PartNumber | BC858CW-7-F | BC858CW-G | BC858CWE6327BTSA1 |
Description | Bipolar Transistors - BJT PNP BIPOLAR | Bipolar Transistors - BJT -30, -.1 | TRANS PNP 30V 0.1A SOT-323 |
Manufacturer | Diodes Incorporated | Comchip Technology | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-323-3 | SOT-323-3 | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | - 30 V | - 30 V | - |
Collector Base Voltage VCBO | - 30 V | - 30 V | - |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
Collector Emitter Saturation Voltage | - 650 mV | - 0.65 V | - |
Maximum DC Collector Current | - 200 mA | - 0.1 A | - |
Gain Bandwidth Product fT | 200 MHz | 100 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | BC858 | BC858 | - |
Height | 1 mm | - | - |
Length | 2.2 mm | - | - |
Packaging | Reel | Reel | - |
Width | 1.35 mm | - | - |
Brand | Diodes Incorporated | Comchip Technology | - |
DC Collector/Base Gain hfe Min | 420 at -2 mA, - 5 V | 420 | - |
Pd Power Dissipation | 200 mW | 150 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.000176 oz | 0.000212 oz | - |
Technology | - | Si | - |
DC Current Gain hFE Max | - | 800 | - |