BC858CDW1

BC858CDW1T1G vs BC858CDW1T1 vs BC858CDW1T13LV

 
PartNumberBC858CDW1T1GBC858CDW1T1BC858CDW1T13LV
DescriptionBipolar Transistors - BJT 100mA 30V Dual PNPTRANS 2PNP 30V 0.1A SOT363
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.65 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Height0.9 mm--
Length2 mm--
PackagingReelTape & Reel (TR)-
Width1.25 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.1 A--
DC Collector/Base Gain hfe Min420--
Pd Power Dissipation380 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000988 oz--
Series---
Package Case-6-TSSOP, SC-88, SOT-363-
Mounting Type-Surface Mount-
Supplier Device Package-SC-88/SC70-6/SOT-363-
Power Max-380mW-
Transistor Type-2 PNP (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-30V-
DC Current Gain hFE Min Ic Vce-420 @ 2mA, 5V-
Vce Saturation Max Ib Ic-650mV @ 5mA, 100mA-
Current Collector Cutoff Max-15nA (ICBO)-
Frequency Transition-100MHz-
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
BC858CDW1T1G Bipolar Transistors - BJT 100mA 30V Dual PNP
BC858CDW1T1 TRANS 2PNP 30V 0.1A SOT363
BC858CDW1T1G TRANS 2PNP 30V 0.1A SOT363
BC858CDW1T13LV Nuevo y original
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