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| PartNumber | BC857W,115 | BC857W,135 |
| Description | Bipolar Transistors - BJT TRANS GP TAPE-7 | Bipolar Transistors - BJT TRANS GP TAPE-11 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-323-3 | SOT-323-3 |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V |
| Collector Base Voltage VCBO | 50 V | 50 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Maximum DC Collector Current | 0.1 A | 0.1 A |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| DC Current Gain hFE Max | 125 at 2 mA, 5 V | 125 at 2 mA, 5 V |
| Height | 1 mm | 1 mm |
| Length | 2.2 mm | 2.2 mm |
| Packaging | Reel | Reel |
| Width | 1.35 mm | 1.35 mm |
| Brand | Nexperia | Nexperia |
| DC Collector/Base Gain hfe Min | 125 | 125 |
| Pd Power Dissipation | 200 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | BC857W T/R | /T3 BC857W |
| Unit Weight | 0.000176 oz | 0.000176 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
BC857W,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 | |
| BC857W,135 | Bipolar Transistors - BJT TRANS GP TAPE-11 | ||
| BC857W,135 | Bipolar Transistors - BJT TRANS GP TAPE-11 | ||
| BC857W,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 | ||
| BC857W | TRANSISTOR NXP BC857W, PK | ||
| BC857W/DG , SC431LCSK-2T | Nuevo y original | ||
| BC857W115 | Nuevo y original | ||
| BC857W135 | Now Nexperia BC857W - Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon |