 |  | | |
| PartNumber | BC856BDW1T3G | BC856BDW1T3 | BC856BDW1T3G(12992EA) |
| Description | Bipolar Transistors - BJT 100mA 80V Dual PNP | Bipolar Transistors - BJT SS GP XSTR PNP 65V | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | - 65 V | - | - |
| Collector Base Voltage VCBO | - 80 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.65 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC856B | - | - |
| DC Current Gain hFE Max | 475 | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 0.1 A | - | - |
| DC Collector/Base Gain hfe Min | 220 | - | - |
| Pd Power Dissipation | 380 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000988 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor |
BC856BDW1T3G | Bipolar Transistors - BJT 100mA 80V Dual PNP | |
| BC856BDW1T3G | Bipolar Transistors - BJT 100mA 80V Dual PNP | ||
| BC856BDW1T3 | Bipolar Transistors - BJT SS GP XSTR PNP 65V | ||
| BC856BDW1T3G(12992EA) | Nuevo y original |